High electron mobility transistor-based hydrogen sensor using ITO as a sensing layer

Md. Iktiham Bin Taher, Yacine Halfaya, Rouba Alrammouz, Mathieu Lazerges, Aurelien Randi, Tarik Moudakir, Nossikpendou Yves Sama, Thomas Guermont, Nicolas Pelissier, Thomas Pichler, Médéric Piedevache, Jacques Pironon, Simon Gautier. High electron mobility transistor-based hydrogen sensor using ITO as a sensing layer. In 2021 IEEE Sensors, Sydney, Australia, October 31 - Nov. 3, 2021. pages 1-4, IEEE, 2021. [doi]

Abstract

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