Alaleh Tajalli, Matteo Meneghini, Isabella Rossetto, Peter Moens, Abhishek Banerjee 0003, Enrico Zanoni, Gaudenzio Meneghesso. Field and hot electron-induced degradation in GaN-based power MIS-HEMTs. Microelectronics Reliability, 76:282-286, 2017. [doi]
Abstract is missing.