Digital active gate drive of SiC MOSFETs for controlling switching behavior - Preparation toward universal digitization of power switching

Hajime Takayama, Takafumi Okuda, Takashi Hikihara. Digital active gate drive of SiC MOSFETs for controlling switching behavior - Preparation toward universal digitization of power switching. I. J. Circuit Theory and Applications, 50(1):183-196, 2022. [doi]

Abstract

Abstract is missing.