Influence of Donor-Type Hole Traps Under P-GaN Gate in GaN-Based Gate Injection Transistor (GIT) - researchr publication authors

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Kenichiro Tanaka, Masahiro Hikita, Tetsuzo Ueda. Influence of Donor-Type Hole Traps Under P-GaN Gate in GaN-Based Gate Injection Transistor (GIT). In IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019. pages 1-4, IEEE, 2019. [doi]

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