Design Methodology for Highly Reliable, High Performance ReRAM and 3-Bit/Cell MLC NAND Flash Solid-State Storage - researchr publication authors

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Shuhei Tanakamaru, Hiroki Yamazawa, Tsukasa Tokutomi, Sheyang Ning, Ken Takeuchi. Design Methodology for Highly Reliable, High Performance ReRAM and 3-Bit/Cell MLC NAND Flash Solid-State Storage. IEEE Trans. on Circuits and Systems, 62-I(3):844-853, 2015. [doi]

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