Demonstration of High-Growth-Rate Epitaxially Grown Si Channel on 3D NAND Test Vehicle with Memory Functionality - researchr publication authors

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Hao-Ling Tang, Insoo Jung, Frank CC Chin, Luc Thomas, Xin Meng, Arvind Kumar, Jaesoo Ahn, Zuoming Zhu, Abhishek Dube, Mahendra Pakala. Demonstration of High-Growth-Rate Epitaxially Grown Si Channel on 3D NAND Test Vehicle with Memory Functionality. In IEEE International Memory Workshop, IMW 2024, Seoul, Republic of Korea, May 12-15, 2024. pages 1-4, IEEE, 2024. [doi]

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