Pitch Device Design in 10nm-Class DRAM Process through DTCO

Yanzhe Tang, Zhongming Liu, Weibing Shang, Fengqin Zhang, Bernard Wu, Zhong Kong, Hongwen Li, Hong Ma, Kanyu Cao. Pitch Device Design in 10nm-Class DRAM Process through DTCO. In Fan Ye, Ting-Ao Tang, editors, 14th IEEE International Conference on ASIC, ASICON 2021, Kunming, China, October 26-29, 2021. pages 1-4, IEEE, 2021. [doi]

@inproceedings{TangLSZWKLMC21,
  title = {Pitch Device Design in 10nm-Class DRAM Process through DTCO},
  author = {Yanzhe Tang and Zhongming Liu and Weibing Shang and Fengqin Zhang and Bernard Wu and Zhong Kong and Hongwen Li and Hong Ma and Kanyu Cao},
  year = {2021},
  doi = {10.1109/ASICON52560.2021.9620445},
  url = {https://doi.org/10.1109/ASICON52560.2021.9620445},
  researchr = {https://researchr.org/publication/TangLSZWKLMC21},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {14th IEEE International Conference on ASIC, ASICON 2021, Kunming, China, October 26-29, 2021},
  editor = {Fan Ye and Ting-Ao Tang},
  publisher = {IEEE},
  isbn = {978-1-6654-3867-4},
}