Mitigate erroneous operations of 2T-2MTJ STT-MRAM based on dynamic voltage threshold

Haoyue Tang, Zhenyu Zhao, Lianhua Qu, Quan Deng, Huan Li, Wei Guo. Mitigate erroneous operations of 2T-2MTJ STT-MRAM based on dynamic voltage threshold. IEICE Electronic Express, 13(13):20160533, 2016. [doi]

@article{TangZQDLG16,
  title = {Mitigate erroneous operations of 2T-2MTJ STT-MRAM based on dynamic voltage threshold},
  author = {Haoyue Tang and Zhenyu Zhao and Lianhua Qu and Quan Deng and Huan Li and Wei Guo},
  year = {2016},
  doi = {10.1587/elex.13.20160533},
  url = {http://dx.doi.org/10.1587/elex.13.20160533},
  researchr = {https://researchr.org/publication/TangZQDLG16},
  cites = {0},
  citedby = {0},
  journal = {IEICE Electronic Express},
  volume = {13},
  number = {13},
  pages = {20160533},
}