Effects of hydrostatic pressure and crossed electric and magnetic fields on shallow-donor states in GaAs/Ga::1-x::Al::x::As quantum wells - researchr publication related

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E. Tangarife, S. Y. López, M. de Dios-Leyva, L. E. Oliveira, C. A. Duque. Effects of hydrostatic pressure and crossed electric and magnetic fields on shallow-donor states in GaAs/Ga::1-x::Al::x::As quantum wells. Microelectronics Journal, 39(3-4):431-434, 2008. [doi]

The following publications are possibly variants of this publication:

Hydrostatic pressure effects on the binding and transition energies for Wannier excitons in GaAs/Ga::1-x::Al::x::As quantum wellsP. Aristizábal, R. L. Restrepo, W. Ospina, C. A. Duque. mj, 39(11):1261-1263, 2008. [doi]

Direct and indirect exciton states in GaAs-(Ga, Al)As double quantum wells under crossed electric and magnetic fieldsL. E. Oliveira, M. de Dios-Leyva, C. A. Duque. mj, 39(3-4):398-401, 2008. [doi]

Magnetoexciton states and diamagnetic shifts in GaAs-Ga::1-x::Al::x::As quantum dots/ultrathin quantum wells under growth-direction magnetic fieldsZ. Barticevic, M. Pacheco, C. A. Duque, L. E. Oliveira. mj, 39(3-4):348-350, 2008. [doi]

Exciton diamagnetic shift in GaAs/Ga::1-x::Al::x::As quantum wells under in-plane magnetic fieldsC. A. Duque, M. de Dios-Leyva, L. E. Oliveira. mj, 39(3-4):407-410, 2008. [doi]

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