On the Possibility of Dynamically Tuning and Collapsing the Ferroelectric Hysteresis/Memory Window in an Asymmetric DG MOS Device: A Path to a Reconfigurable Logic-Memory Device - researchr publication authors

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Nujhat Tasneem, Asif I. Khan. On the Possibility of Dynamically Tuning and Collapsing the Ferroelectric Hysteresis/Memory Window in an Asymmetric DG MOS Device: A Path to a Reconfigurable Logic-Memory Device. In 76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018. pages 1-2, IEEE, 2018. [doi]

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