Robust FinFET Memory Circuits with P-Type Data Access Transistors for Higher Integration Density and Reduced Leakage Power

Sherif A. Tawfik, Volkan Kursun. Robust FinFET Memory Circuits with P-Type Data Access Transistors for Higher Integration Density and Reduced Leakage Power. J. Low Power Electronics, 5(4):497-508, 2009. [doi]

@article{TawfikK09,
  title = {Robust FinFET Memory Circuits with P-Type Data Access Transistors for Higher Integration Density and Reduced Leakage Power},
  author = {Sherif A. Tawfik and Volkan Kursun},
  year = {2009},
  doi = {10.1166/jolpe.2009.1048},
  url = {http://dx.doi.org/10.1166/jolpe.2009.1048},
  researchr = {https://researchr.org/publication/TawfikK09},
  cites = {0},
  citedby = {0},
  journal = {J. Low Power Electronics},
  volume = {5},
  number = {4},
  pages = {497-508},
}