A Variable Gate Resistance SiC MOSFET Drive Circuit - researchr publication authors

researchr

You are not signed in
Sign in
Sign up

Yongxiao Teng, Qiang Gao, Qian Zhang, Jiabao Kou, Dianguo Xu. A Variable Gate Resistance SiC MOSFET Drive Circuit. In The 46th Annual Conference of the IEEE Industrial Electronics Society, IECON 2020, Singapore, October 18-21, 2020. pages 2683-2688, IEEE, 2020. [doi]

This author has not been identified. Look up 'Yongxiao Teng' in GoogleThis author has not been identified. Look up 'Qiang Gao' in GoogleThis author has not been identified. Look up 'Qian Zhang' in GoogleThis author has not been identified. Look up 'Jiabao Kou' in GoogleThis author has not been identified. Look up 'Dianguo Xu' in Google

runs on WebDSL