Yongxiao Teng, Qiang Gao, Qian Zhang, Jiabao Kou, Dianguo Xu. A Variable Gate Resistance SiC MOSFET Drive Circuit. In The 46th Annual Conference of the IEEE Industrial Electronics Society, IECON 2020, Singapore, October 18-21, 2020. pages 2683-2688, IEEE, 2020. [doi]
@inproceedings{TengGZKX20,
title = {A Variable Gate Resistance SiC MOSFET Drive Circuit},
author = {Yongxiao Teng and Qiang Gao and Qian Zhang and Jiabao Kou and Dianguo Xu},
year = {2020},
doi = {10.1109/IECON43393.2020.9254632},
url = {https://doi.org/10.1109/IECON43393.2020.9254632},
researchr = {https://researchr.org/publication/TengGZKX20},
cites = {0},
citedby = {0},
pages = {2683-2688},
booktitle = {The 46th Annual Conference of the IEEE Industrial Electronics Society, IECON 2020, Singapore, October 18-21, 2020},
publisher = {IEEE},
isbn = {978-1-7281-5414-5},
}