A 40-nm 256-Kb 0.6-V operation half-select resilient 8T SRAM with sequential writing technique enabling 367-mV VDDmin reduction - researchr publication authors

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Masaharu Terada, Shusuke Yoshimoto, Shunsuke Okumura, Toshikazu Suzuki, Shinji Miyano, Hiroshi Kawaguchi, Masahiko Yoshimoto. A 40-nm 256-Kb 0.6-V operation half-select resilient 8T SRAM with sequential writing technique enabling 367-mV VDDmin reduction. In Keith A. Bowman, Kamesh V. Gadepally, Pallab Chatterjee, Mark M. Budnik, Lalitha Immaneni, editors, Thirteenth International Symposium on Quality Electronic Design, ISQED 2012, Santa Clara, CA, USA, March 19-21, 2012. pages 489-492, IEEE, 2012. [doi]

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