High Gain 220 - 275 GHz Amplifier MMICs Based on Metamorphic 20 nm InGaAs MOSFET Technology - researchr publication authors

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Axel Tessmann, Arnulf Leuther, F. Heinz, Frank Bernhardt, Hermann Massler. High Gain 220 - 275 GHz Amplifier MMICs Based on Metamorphic 20 nm InGaAs MOSFET Technology. In 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), San Diego, CA, USA, October 15-17, 2018. pages 156-159, IEEE, 2018. [doi]

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