Table of Contents

• On the use of Drift-Diffusion and Hydrodynamic Transport Models for Simulating the Negative Differential Mobility EffectGerald Wedel, T. Nardmanrr, Michael Schröter. 1-4 [doi]
• Current Status of Terahertz Integrated Circuits - From Components to SystemsUllrich R. Pfeiffer, Ritesh Jain, Janusz Grzyb, Stefan Malz, Philipp Hillger, Pedro Rodríguez-Vázquez. 1-7 [doi]
• The RF Sampler: Chip-Scale Frequency Conversion and Filtering Enabling Affordable Element-Level Digital BeamformingMatthew Morton, Yan Chen, Alyosha C. Molnar, Edward Szoka, Robin Ying. 1-5 [doi]
• Materials, Processes, and Markets for Monolithic III-V Devices in Silicon Integrated CircuitsE. A. Fitzgerald. 1-6 [doi]
• On-Wafer Transistor Characterization to 750 GHz - the Approach, Results, and PitfallsDylan F. Williams, Jerome Cheron, Benjamin F. Jamroz, Richard Chamberlin. 1-5 [doi]
• A Low Insertion-Loss 10-110 GHz Digitally Tunable SPST Switch in 22 nm FD-SOI CMOSRadu Ciocoveanu, Robert Weigel, Amelie Hagelauer, Vadim Issakov. 1-4 [doi]
• DS Curves of AlGaN/GaN HEMTsPradeep Dasari, Chandan Sharma, Shreepad Karmalkar. 1-5 [doi]
• Indium Phosphide Photonic Integrated Circuits: Technology and ApplicationsJonathan Klamkin, Hongwei Zhao, Bowen Song, Yuan Liu, Brandon Isaac, Sergio Pinna, Fengqiao Sang, Larry Coldren. 8-13 [doi]
• Technology Positioning for mm Wave Applications: 130/90nm SiGe BiCMOS vs. 28nm RFCMOSAlvin Joseph, Vibhor Jain, Shih Ni Ong, Randy Wolf, Suh Fei Lim, Jagar Singh. 18-21 [doi]
• Analog Optical RF-Links for Large Radio TelescopesJonas Weiss. 24-27 [doi]
• A 256-Gbps PAM-4 Signal Generator IC in 0.25-µm InP DHBT TechnologyMunehiko Nagatani, Hitoshi Wakita, Teruo Jyo, Miwa Mutoh, Minoru Ida, Sorin P. Voinigescu, Hideyuki Nosaka. 28-31 [doi]
• A 3D-Integrated 56 Gb/s NRZ/PAM4 Reconfigurable Segmented Mach-Zehnder Modulator-Based Si-Photonics TransmitterCheng Li, Kunzhi Yu, Jinsoo Rhim, Kehan Zhu, Nan Qi, Marco Fiorentino, Thierry Pinguet, Mark Peterson, Vishal Saxena, Samuel Palermo. 32-35 [doi]
• Nonlinear Embedding of FET Devices for High Efficiency Power Amplifier DesignHaedong Jang, Zulhazmi Mokhti, Björn Herrmann, Richard Wilson. 36-43 [doi]
• Analysis of Gate-Voltage Clipping Behavior on Class-F and Inverse Class-F AmplifiersHiroshi Yamamoto, Ken Kikuchi, Norihiko Ui, Kazutaka Inoue, Valeria Vadalà, Gianni Bosi, Antonio Raffo, Giorgio Vannini. 44-47 [doi]
• Ka-Band GaN Large-Signal Model Considering Trap Effect on Nonlinear Capacitance by Using Transient S-Parameters MeasurementYutaro Yamaguchi 0002, Tomohiro Otsuka, Masatake Hangai, Shintaro Shinjo, Toshiyuki Oishi. 48-51 [doi]
• A 2x-Oversampling, 128-GS/s 5-bit Flash ADC for 64-GBaud ApplicationsAlireza Zandieh, Peter Schvan, Sorin P. Voinigescu. 52-55 [doi]
• A 25.6-GS/s 40-GHz 1-dB BW Current-Mode Track and Hold Circuit with more than 5-ENOBXuan-Quang Du, Markus Grozing, Manfred Berroth. 56-59 [doi]
• An Adaptable 6.4 - 32 GS/s Track-and-Hold Amplifier with Track-Mode Masking for High Signal Power Applications in 55 nm SiGe-BiCMOSP. Thomas, M. Buck, Markus Grözing, Manfred Berroth, J. Rauscher, M. Epp, M. Schlumpp. 60-63 [doi]
• SiGe BiCMOS Current Status and Future Trends in EuropePascal Chevalier 0002, Wolfgang Liebl, Holger Rücker, Alexis Gauthier, Dirk Manger, Bernd Heinemann, Grégory Avenier, Josef Bock. 64-71 [doi]
• T SiGe: C HBT Featuring an Implanted Collector in a 55-nm CMOS NodeA. Gauthier, J. Borrel, P. Chevalier, Grégory Avenier, A. Montagne, M. Juhel, R. Duru, L.-R. Clement, C. Borowiak, Michel Buczko, C. Gaquiere. 72-75 [doi]
• max=537GHz in 130nm and 90nm CMOSD. Manger, W. Liebl, S. Boguth, B. Binder, K. Aufinger, C. Dahl, C. Hengst, A. Pribil, J. Oestreich, S. Rohmfeld, S. Rothenhaeusser, D. Tschumakow, J. Boeck. 76-79 [doi]
• Scaling Millimeter-Wave Phased Arrays: Challenges and SolutionsAlberto Valdes-Garcia, Bodhisatwa Sadhu, Xiaoxiong Gu, Jean-Olivier Plouchart, Mark Yeck, Daniel J. Friedman. 80-84 [doi]
• A 28-GHz, 18-dBm, 48% PAE Stacked-FET Power Amplifier with Coupled-Inductor Neutralization in 45-nm SOI CMOSKang Ning 0002, James F. Buckwalter. 85-88 [doi]
• A 2-6 GHz, 45 dBm Peak Power T/R SPDT Switch for 5G mMIMO ApplicationsVenkata N. K. Malladi, Mike Fraser, Joseph Staudinger, Mario Bokatius, Monte Miller. 89-92 [doi]
• Non-Linear RF Modeling of GaN HEMTs with Industry Standard ASM GaN Model (Invited)Sourabh Khandelwal, Yogesh Singh Chauhan, Jason Hodges, Sayed Ali Albahrani. 93-97 [doi]
• Improved Charge Modeling of Field-Plate Enhanced AlGaN/GaN HEMT Devices Using a Physics Based Compact ModelKevin Kellogg, Sourabh Khandelwal, Neil Craig, Larry Dunleavy. 102-105 [doi]
• MAX in mm-Wave InP DHBTs: Impact of Device Dimensions on Extraction ErrorsW. Quan, A. M. Arabhavi, R. Flueckiger, Olivier Ostinelli, Colombo R. Bolognesi. 110-113 [doi]
• A Low-Power Triple-Loop Feedback Broadband LNA in a 130 nm SiGe BiCMOS TechnologyBadou Sene, Vadim Issakov. 114-117 [doi]
• 1.5-54 GHz High Dynamic Range LNA and Mixer Combination for a MIMO Radar ApplicationMantas Sakalas, Niko Joram, Frank Ellinger. 118-121 [doi]
• MAX=463/829GHz in a 10µm Long EmitterA. M. Arabhavi, W. Quan, Olivier Ostinelli, Colombo R. Bolognesi. 132-135 [doi]
• GaN HEMT for Space ApplicationsTomio Satoh, Ken Osawa, Atsushi Nitta. 136-139 [doi]
• 40 W Ka-Band Single and Dual Output GaN MMIC Power Amplifiers on SiCMichael Roberg, Thi Ri Mya Kywe, Matthew Irvine, Orlando Marrufo, Sabyasachi Nayak. 140-143 [doi]
• A 4-W K-Band 40% PAE Three-Stage MMIC Power AmplifierMaxwell Robert Duffy, Gregor Lasser, Michael Roberg, Zoya Popovic. 144-147 [doi]
• A 200 MHz Bandwidth GaAs Switch-Mode Supply ModulatorTatsuya Soma, Shinichi Hori, Kazuaki Kunihiro. 148-151 [doi]
• Monolithic Attenuator/Limiter Using Nonlinear ResistorsScott Schafer, Michael Roberg. 152-155 [doi]
• High Gain 220 - 275 GHz Amplifier MMICs Based on Metamorphic 20 nm InGaAs MOSFET TechnologyAxel Tessmann, Arnulf Leuther, F. Heinz, Frank Bernhardt, Hermann Massler. 156-159 [doi]
• Wideband Amplifier with Integrated Power Detector for 100 GHz to 200 GHz mm-Wave ApplicationsPaul Stärke, Vincent Rieß, Corrado Carta, Frank Ellinger. 160-163 [doi]
• 8.6-13.6 mW Series-Connected Power Amplifiers Designed at 325 GHz Using 130 nm InP HBT TechnologyAhmed S. H. Ahmed, Arda Simsek, Miguel Urteaga, Mark J. W. Rodwell. 164-167 [doi]
• FinFET for mm Wave - Technology and Circuit Design ChallengesSteven Callender, Woorim Shin, Hyung-Jin Lee, Stefano Pellerano, Christopher D. Hull. 168-173 [doi]
• Carrier Transport in BJTs: from Ballistic to Diffusive and Off-EquilibriumMark Lundstrom. 174-181 [doi]
• Impact of Emitter Width Scaling on Performance and Ruggedness of SiGe HBTs for PA ApplicationsSaurabh Sirohi, Vibhor Jain, Ajay Raman, Bhargava Nukala, Elan Veeramani, James W. Adkisson, Alvin Joseph. 182-185 [doi]
• Noise Figure Characterization of Horizontal Current Bipolar Transistor (HCBT)Josip Zilak, Marko Koricic, Zeljko Osrecki, Marko Simic, Tomislav Suligoj. 186-189 [doi]
• Emitter-Base Profile Optimization of SiGe HBTs for Improved Thermal Stability and Frequency Response at Low-Bias CurrentsUppili S. Raghunathan, Brian R. Wier, Zachary E. Fleetwood, Michael A. Oakley, Vibhor Jain, John D. Cressler. 190-193 [doi]
• A 6 kV ESD-Protected Low-Power 24 GHz LNA for Radar Applications in SiGe BiCMOSVadim Issakov, Sebastian Kehl-Waas, Radu Ciocoveanu, Werner Simbürger, Angelika Geiselbrechtinger. 194-197 [doi]
• A Packaged Single-Ended K-Band SiGe LNA with 2.14 dB Mean Noise FigureAbdurrahman H. Aliuhani, Tumay Kanar, Gabriel M. Rebeiz. 198-201 [doi]
• A 1-20 GHz Distributed, Stacked SiGe Power AmplifierSunil Rao, Tianyu Chang, Ickhyun Song, Moon-Kyu Cho, John D. Cressler. 202-205 [doi]
• Using SiGe-on-SOI HBTs to Build 300°C Capable Analog CircuitsAnup P. Omprakash, Adrian Ildefonso, George Tzintzarov, Jeffrey Babcock, Rajarshi Mukhopadhyay, John D. Cressler. 206-209 [doi]
• SiGe HBT PA Design for 5G (28 GHz and Beyond) - Modeling and Design ChallengesMark P. van der Heijden, Andries J. Scholten. 210-214 [doi]
• Revisiting Safe Operating Area: SiGe HBT Aging Models for Reliability-Aware Circuit DesignBrian R. Wier, Rafael Perez Martinez, Uppili S. Raghunathar, Hanbin Ying, Saeed Zeinolabedinzadeh, John D. Cressler. 215-218 [doi]
• Modeling High-Current Effects in Bipolar Transistors: A Theory ReviewM. Schroter, S. Falk. 219-222 [doi]
• A V-Band SiGe Image-Reject Receiver Front-End for Atmospheric Remote SensingMilad Frounchi, Christopher T. Coen, Clifford D. Y. Cheon, Nelson Lourenco, Wyman Williams, John D. Cressler. 223-226 [doi]
• A 220 GHz OOK Outphasing Transmitter in 130-nm BiCMOS TechnologyKefei Wu, Bassem Fahs, Mona Mostafa Hella. 227-230 [doi]
• A 140 GHz MIMO Transceiver in 45 nm SOI CMOSArda Simsek, Seong-Kyun Kim, Mark J. W. Rodwell. 231-234 [doi]
• Integrated 220-260 GHz Radar FrontendThomas Merkle, Sandrine Wagner, Axel Tessmann, Michael Kuri, Hermann Massler, Arnulf Leuther. 235-238 [doi]
• 650 Volt GaN: Highest Quality-Highest Performance Drives Market RampPrimit Parikh, Y. F. Wu, L. Shen, John Gritters, Tsutomu Hosoda, R. Barr, Kurt Smith, Ken Shono, J. McKay, H. Clement, S. Chowdhury, S. Yea, P. Smith, Lee McCarthy, R. Birkhahn, P. Zuk, Yoshimori Asai. 239-242 [doi]
• Leak-Proof Packaging for GaN Chip with Controlled Thermal Spreading and TransientsYasuo Saito, Tatsuhiko Aizawa, Kenji Wasa, Yoshiro Nogami. 243-246 [doi]
• Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low-k IHigh-k Double Passivation Layers Paper TitleKai Nakamura, Hideyuki Hanawa, Kazushige Horio. 247-250 [doi]
• Quantification of Dopant Profiles in SiGe HBT DevicesEric J. Jones, Jonathan Poplawsky, Donavan Leonard, Keith Chung, Kevin Mercurio, Paul Brabant, Thomas Adam, Patrick B. Shea, Thomas Knight. 255-258 [doi]
• Equivalent Circuit Modelling and Parameter Extraction of GaN HEMT Gate Lag Inducing ACLR Degradation of TDD-LTE BTS PAToshihiro Shimoda, Yoji Murau, Tomoya Kaneko. 259-262 [doi]
• A Crystal-Less Programmable Clock Generator with RC-LC Hybrid Oscillator for GHz Applications in 14 nm FinFET CMOSJeongho Hwang, Gyu-Seob Jeong, Sang-Hyeok Chu, Wooseok Kim, Taeik Kim, Deog Kyoon Jeong. 263-266 [doi]
• Large-Swing 22nm Si/SiGe FDSOI Stacked Cascodes for 56GBaud Drivers and 5G PAsM. Sadeah Dadash, David Harame, Sorin P. Voiniaescu. 267-270 [doi]
• 128-GS/s ADC Front-End with Over 60-GHz Input Bandwidth in 22-nm Si/SiGe FDSOI CMOSAlireza Zandieh, Naftali Weiss, The'Linh Nguyen, David Haranne, Sorin P. Voinigescu. 271-274 [doi]
• A DC-60 GHz I/Q Modulator in 45 nm SOI CMOS for Ultra-Wideband 5G RadiosHasan Al-Rubaye, Gabriel M. Rebeiz. 275-278 [doi]
• 40V High Side PSI5 Transceiver with 65dBµV Conducted Emission Level in a BiCMOS ProcessS. N. Easwaran, A. Chen, T. Duryea, D. Rollman. 279-282 [doi]
• AC-Stacked Power Amplifier for APT/ET LTE HPUE ApplicationsKazuo Watanabe, Satoshi Tanaka, Masatoshi Hase, Yuuri Honda, Yusuke Tanaka, Satoshi Arayashiki. 283-286 [doi]