Werner Simbürger - researchr alias

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Viewing Publication 1 - 22 from 22

2018

A 6 kV ESD-Protected Low-Power 24 GHz LNA for Radar Applications in SiGe BiCMOSVadim Issakov, Sebastian Kehl-Waas, Radu Ciocoveanu, Werner Simbürger, Angelika Geiselbrechtinger. bcicts 2018: 194-197 [doi]

2016

Transient voltage suppressors - technologies and characteristicsWerner Simbürger, Joost Willemen, Vadim Vendt, Thomas Schwingshackl, Antoine D'Arbonneau. ei, 133(1):11-17, 2016. [doi]

2015

ESD characterization of multi-finger RF nMOSFET transistors by TLP and transient interferometric mapping techniqueMatteo Rigato, Clément Fleury, Michael Heer, Mattia Capriotti, Werner Simbürger, Dionyz Pogany. mr, 55(9-10):1471-1475, 2015. [doi]

2011

On-wafer measurement of the reverse-recovery time of integrated diodes by Transmission-Line-Pulsing (TLP)Martin Sauter, Werner Simbürger, David Johnsson, Matthias Stecher. mr, 51(8):1309-1314, 2011. [doi]

2010

System ESD robustness by co-design of on-chip and on-board protection measuresHarald Gossner, Werner Simbürger, M. Stecher. mr, 50(9-11):1359-1366, 2010. [doi]

2009

2007

An Integrated Gravimetric FBAR Circuit for Operation in Liquids Using a Flip-Chip Extended 0.13μm CMOS TechnologyM. Augustyniak, W. Weber, Gottfried Beer, Hans Mulatz, L. Elbrecht, H.-J. Timme, Marc Tiebout, Werner Simbürger, Christian Paulus, Björn Eversmann, Doris Schmitt-Landsiedel, Roland Thewes, Ralf Brederlow. isscc 2007: 392-610 [doi]

A 79GHz SiGe-Bipolar Spread-Spectrum TX for Automotive RadarSaverio Trotta, Herbert Knapp, Donald Dibra, Klaus Aufinger, Thomas Meister, Josef Böck, Werner Simbürger, Arpad L. Scholtz. isscc 2007: 430-613 [doi]

Design considerations for low-noise, highly-linear millimeter-wave mixers in SiGe bipolar technologySaverio Trotta, Bernhard Dehlink, Herbert Knapp, Klaus Aufinger, Thomas F. Meister, Josef Bock, Werner Simbürger, Arpad L. Scholtz. esscirc 2007: 356-359 [doi]

An 84 GHz Bandwidth and 20 dB Gain Broadband Amplifier in SiGe Bipolar TechnologySaverio Trotta, Herbert Knapp, Klaus Aufinger, Thomas Meister, Josef Bock, Bernhard Dehlink, Werner Simbürger, Arpad L. Scholtz. jssc, 42(10):2099-2106, 2007. [doi]

2004

2003

A fully integrated 5.3 GHz, 2.4V, 0.3 W SiGe-bipolar power amplifier with 50Ω outputWinfried Bakalski, Werner Simbürger, Ronald Thüringer, Andriy Vasylyev, Arpad L. Scholtz. esscirc 2003: 561-564 [doi]

2002

A monolithic 2.45 GHz, 0.56 W power amplifier with 45 PAE at 2.4 V in standard 25 GHz f::T:: Si-bipolarW. Bakalski, Werner Simbürger, Daniel Kehrer, Hans-Dieter Wohlmuth, M. Rest, Arpad L. Scholtz. iscas 2002: 803-806 [doi]

2001

Modeling of monolithic lumped planar transformers up to 20 GHzDaniel Kehrer, Werner Simbürger, Hans-Dieter Wohlmuth, Arpad L. Scholtz. cicc 2001: 401-404 [doi]

A high-IP3 RF receiver chip set for mobile radio base stations up to 2 GHzHans-Dieter Wohlmuth, Werner Simbürger. jssc, 36(7):1132-1137, 2001. [doi]

1999

A monolithic transformer coupled 5-W silicon power amplifier with 59% PAE at 0.9 GHzWerner Simbürger, Hans-Dieter Wohlmuth, Peter Weger, Alexander Heinz. jssc, 34(12):1881-1892, 1999. [doi]

1994

Personal communications transceiver architectures for monolithic integrationErnst Bonek, Gerhard Schultes, Peter Kreuzgruber, Werner Simbürger, P. Weger, T. C. Leslie, J. Popp, H. Knapp, N. Rohringer. pimrc 1994: 363-368 [doi]

1992

A testbed for DECT physical- and medium access-layerGerhard Schultes, Arpad L. Scholtz, Martin Happel, Werner Simbürger. pimrc 1992: 349-356 [doi]

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