Christoforos Theodorou, Eleftherios G. Ioannidis, Sébastien Haendler, Nicolas Planes, Franck Arnaud, Jalal Jomaah, Charalambos A. Dimitriadis, Gérard Ghibaudo. Impact of front-back gate coupling on low frequency noise in 28 nm FDSOI MOSFETs. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 334-337, IEEE, 2012. [doi]
Abstract is missing.