Multiple excited state modification in InAs/InGaAs quantum dot structures at high excitation power - researchr publication authors

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T. V. Torchynska, H. M. Alfaro Lopez, J. L. Casas Espinola, P. G. Eliseev, A. Stintz, K. J. Malloy, R. Pena Sierra, Eu. Shcherbina. Multiple excited state modification in InAs/InGaAs quantum dot structures at high excitation power. Microelectronics Journal, 36(3-6):186-189, 2005. [doi]

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