Load-Pull Methodology to Characterize GaN High-Electron-Mobility Transistors (HEMTs) - researchr publication authors

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Nhu Q. Tran, Loc T. P. Nguyen, Tri M. Do, Quan M. Hoang. Load-Pull Methodology to Characterize GaN High-Electron-Mobility Transistors (HEMTs). In Pandian Vasant, Gerhard-Wilhelm Weber, Jose Antonio Marmolejo Saucedo, Elias Munapo, J. Joshua Thomas, editors, Intelligent Computing & Optimization - Proceedings of the 5th International Conference on Intelligent Computing and Optimization, ICO 2022, Hua Hin, Thailand, 27-28 October 2022. Volume 569 of Lecture Notes in Networks and Systems, pages 1078-1085, Springer, 2022. [doi]

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