Load-Pull Methodology to Characterize GaN High-Electron-Mobility Transistors (HEMTs)

Nhu Q. Tran, Loc T. P. Nguyen, Tri M. Do, Quan M. Hoang. Load-Pull Methodology to Characterize GaN High-Electron-Mobility Transistors (HEMTs). In Pandian Vasant, Gerhard-Wilhelm Weber, Jose Antonio Marmolejo Saucedo, Elias Munapo, J. Joshua Thomas, editors, Intelligent Computing & Optimization - Proceedings of the 5th International Conference on Intelligent Computing and Optimization, ICO 2022, Hua Hin, Thailand, 27-28 October 2022. Volume 569 of Lecture Notes in Networks and Systems, pages 1078-1085, Springer, 2022. [doi]

@inproceedings{TranNDH22,
  title = {Load-Pull Methodology to Characterize GaN High-Electron-Mobility Transistors (HEMTs)},
  author = {Nhu Q. Tran and Loc T. P. Nguyen and Tri M. Do and Quan M. Hoang},
  year = {2022},
  doi = {10.1007/978-3-031-19958-5_101},
  url = {https://doi.org/10.1007/978-3-031-19958-5_101},
  researchr = {https://researchr.org/publication/TranNDH22},
  cites = {0},
  citedby = {0},
  pages = {1078-1085},
  booktitle = {Intelligent Computing & Optimization - Proceedings of the 5th International Conference on Intelligent Computing and Optimization, ICO 2022, Hua Hin, Thailand, 27-28 October 2022},
  editor = {Pandian Vasant and Gerhard-Wilhelm Weber and Jose Antonio Marmolejo Saucedo and Elias Munapo and J. Joshua Thomas},
  volume = {569},
  series = {Lecture Notes in Networks and Systems},
  publisher = {Springer},
  isbn = {978-3-031-19958-5},
}