The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications - researchr publication authors

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Eldad Bahat-Treidel, Oliver Hilt, H. Christopher, A. Klehr, A. Ginolas, A. Liero, Joachim Würfl. The influence of the gate trench orientation to the crystal plane on the conduction properties of vertical GaN MISFETs for laser driving applications. In 2020 Device Research Conference, DRC 2020, Columbus, OH, USA, June 21-24, 2020. pages 1-2, IEEE, 2020. [doi]

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