A novel method to improve cell endurance window in source-side injection split gate flash memory

Yong-Shiuan Tsair, Yean-Kuen Fang, Feng-Renn Juang, Yu-Hsiung Wang, Wen-Ting Chu, Yung-Tao Lin, Luan Tran. A novel method to improve cell endurance window in source-side injection split gate flash memory. Microelectronics Reliability, 52(6):1055-1059, 2012. [doi]

Abstract

Abstract is missing.