0.6 V operation, 16 % faster set/reset ReRAM boost converter with adaptive buffer voltage for ReRAM and NAND flash hybrid solid-state drives

Kota Tsurumi, Masahiro Tanaka, Ken Takeuchi. 0.6 V operation, 16 % faster set/reset ReRAM boost converter with adaptive buffer voltage for ReRAM and NAND flash hybrid solid-state drives. In 18th International Symposium on Quality Electronic Design, ISQED 2017, Santa Clara, CA, USA, March 14-15, 2017. pages 81-86, IEEE, 2017. [doi]

@inproceedings{TsurumiTT17,
  title = {0.6 V operation, 16 % faster set/reset ReRAM boost converter with adaptive buffer voltage for ReRAM and NAND flash hybrid solid-state drives},
  author = {Kota Tsurumi and Masahiro Tanaka and Ken Takeuchi},
  year = {2017},
  doi = {10.1109/ISQED.2017.7918297},
  url = {https://doi.org/10.1109/ISQED.2017.7918297},
  researchr = {https://researchr.org/publication/TsurumiTT17},
  cites = {0},
  citedby = {0},
  pages = {81-86},
  booktitle = {18th International Symposium on Quality Electronic Design, ISQED 2017, Santa Clara, CA, USA, March 14-15, 2017},
  publisher = {IEEE},
  isbn = {978-1-5090-5404-6},
}