Fabrication of High Performance High Electron Mobility Transistor Design Based on III-V Compound Semiconductor

Hla Myo Tun, Myat Su Nwe. Fabrication of High Performance High Electron Mobility Transistor Design Based on III-V Compound Semiconductor. In Nor Muzlifah Mahyuddin, Nor Rizuan Mat Noor, Harsa Amylia Mat Sakim, editors, Proceedings of the 11th International Conference on Robotics, Vision, Signal Processing and Power Applications - Enhancing Research and Innovation through the Fourth Industrial Revolution, RoViSP 2021, Penang, Malaysia, 5-6 April 2021. Volume 829 of Lecture Notes in Electrical Engineering, pages 376-381, Springer, 2021. [doi]

Authors

Hla Myo Tun

This author has not been identified. Look up 'Hla Myo Tun' in Google

Myat Su Nwe

This author has not been identified. Look up 'Myat Su Nwe' in Google