Fabrication of High Performance High Electron Mobility Transistor Design Based on III-V Compound Semiconductor

Hla Myo Tun, Myat Su Nwe. Fabrication of High Performance High Electron Mobility Transistor Design Based on III-V Compound Semiconductor. In Nor Muzlifah Mahyuddin, Nor Rizuan Mat Noor, Harsa Amylia Mat Sakim, editors, Proceedings of the 11th International Conference on Robotics, Vision, Signal Processing and Power Applications - Enhancing Research and Innovation through the Fourth Industrial Revolution, RoViSP 2021, Penang, Malaysia, 5-6 April 2021. Volume 829 of Lecture Notes in Electrical Engineering, pages 376-381, Springer, 2021. [doi]

Abstract

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