Michael A. Turi, José G. Delgado-Frias. Effective Low Leakage 6T and 8T FinFET SRAMs: Using Cells With Reverse-Biased FinFETs, Near-Threshold Operation, and Power Gating. IEEE Trans. Circuits Syst. II Express Briefs, 67-II(4):765-769, 2020. [doi]
@article{TuriD20,
title = {Effective Low Leakage 6T and 8T FinFET SRAMs: Using Cells With Reverse-Biased FinFETs, Near-Threshold Operation, and Power Gating},
author = {Michael A. Turi and José G. Delgado-Frias},
year = {2020},
doi = {10.1109/TCSII.2019.2922921},
url = {https://doi.org/10.1109/TCSII.2019.2922921},
researchr = {https://researchr.org/publication/TuriD20},
cites = {0},
citedby = {0},
journal = {IEEE Trans. Circuits Syst. II Express Briefs},
volume = {67-II},
number = {4},
pages = {765-769},
}