Effective Low Leakage 6T and 8T FinFET SRAMs: Using Cells With Reverse-Biased FinFETs, Near-Threshold Operation, and Power Gating - researchr publication

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Michael A. Turi, José G. Delgado-Frias. Effective Low Leakage 6T and 8T FinFET SRAMs: Using Cells With Reverse-Biased FinFETs, Near-Threshold Operation, and Power Gating. IEEE Trans. Circuits Syst. II Express Briefs, 67-II(4):765-769, 2020. [doi]

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