Stanislav Tyaginov, Ivan Starkov, Hubert Enichlmair, C. Jungemann, Jong Mun Park, E. Seebacher, R. L. de Orio, Hajdin Ceric, Tibor Grasser. An analytical approach for physical modeling of hot-carrier induced degradation. Microelectronics Reliability, 51(9-11):1525-1529, 2011. [doi]
@article{TyaginovSEJPSOCG11,
title = {An analytical approach for physical modeling of hot-carrier induced degradation},
author = {Stanislav Tyaginov and Ivan Starkov and Hubert Enichlmair and C. Jungemann and Jong Mun Park and E. Seebacher and R. L. de Orio and Hajdin Ceric and Tibor Grasser},
year = {2011},
doi = {10.1016/j.microrel.2011.07.089},
url = {http://dx.doi.org/10.1016/j.microrel.2011.07.089},
researchr = {https://researchr.org/publication/TyaginovSEJPSOCG11},
cites = {0},
citedby = {0},
journal = {Microelectronics Reliability},
volume = {51},
number = {9-11},
pages = {1525-1529},
}