Four-Valued Magnetic Random Access Memory Based on Magneto Tunnel Junction and Resonant Tunneling Diode

Tetsuya Uemura, Masafumi Yamamoto. Four-Valued Magnetic Random Access Memory Based on Magneto Tunnel Junction and Resonant Tunneling Diode. Multiple-Valued Logic and Soft Computing, 11(5-6):467-479, 2005. [doi]

Abstract

Abstract is missing.