STT-MRAM Operating at 0.38V Using Negative-Resistance Sense Amplifier

Yohei Umeki, Koji Yanagida, Shusuke Yoshimoto, Shintaro Izumi, Masahiko Yoshimoto, Hiroshi Kawaguchi, Koji Tsunoda, Toshihiro Sugii. STT-MRAM Operating at 0.38V Using Negative-Resistance Sense Amplifier. IEICE Transactions, 97-A(12):2411-2417, 2014. [doi]

@article{UmekiYYIYKTS14,
  title = {STT-MRAM Operating at 0.38V Using Negative-Resistance Sense Amplifier},
  author = {Yohei Umeki and Koji Yanagida and Shusuke Yoshimoto and Shintaro Izumi and Masahiko Yoshimoto and Hiroshi Kawaguchi and Koji Tsunoda and Toshihiro Sugii},
  year = {2014},
  url = {http://search.ieice.org/bin/summary.php?id=e97-a_12_2411},
  researchr = {https://researchr.org/publication/UmekiYYIYKTS14},
  cites = {0},
  citedby = {0},
  journal = {IEICE Transactions},
  volume = {97-A},
  number = {12},
  pages = {2411-2417},
}