STT-MRAM Operating at 0.38V Using Negative-Resistance Sense Amplifier

Yohei Umeki, Koji Yanagida, Shusuke Yoshimoto, Shintaro Izumi, Masahiko Yoshimoto, Hiroshi Kawaguchi, Koji Tsunoda, Toshihiro Sugii. STT-MRAM Operating at 0.38V Using Negative-Resistance Sense Amplifier. IEICE Transactions, 97-A(12):2411-2417, 2014. [doi]

Abstract

Abstract is missing.