TCAD Simulation of a 10nm n-Channel Vertical Double Gate Silicon On Insulator MOSFET for Digital Applications

Srinivas Varma, Ch Pratyusha Chowdari, D. Jayanthi, Asisa Kumar Panigrahi, K. Jamal. TCAD Simulation of a 10nm n-Channel Vertical Double Gate Silicon On Insulator MOSFET for Digital Applications. In 13th International Conference on Computing Communication and Networking Technologies, ICCCNT 2022, Kharagpur, India, October 3-5, 2022. pages 1-6, IEEE, 2022. [doi]

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