Statistical analysis of 6T SRAM data retention voltage under process variation

Elena Ioana Vatajel, Joan Figueras. Statistical analysis of 6T SRAM data retention voltage under process variation. In Rolf Kraemer, Adam Pawlak, Andreas Steininger, Mario Schölzel, Jaan Raik, Heinrich Theodor Vierhaus, editors, 14th IEEE International Symposium on Design and Diagnostics of Electronic Circuits & Systems, DDECS 2011, Cottbus, Germany, April 13-15, 2011. pages 365-370, IEEE, 2011. [doi]

@inproceedings{VatajelF11,
  title = {Statistical analysis of 6T SRAM data retention voltage under process variation},
  author = {Elena Ioana Vatajel and Joan Figueras},
  year = {2011},
  doi = {10.1109/DDECS.2011.5783112},
  url = {http://dx.doi.org/10.1109/DDECS.2011.5783112},
  researchr = {https://researchr.org/publication/VatajelF11},
  cites = {0},
  citedby = {0},
  pages = {365-370},
  booktitle = {14th IEEE International Symposium on Design and Diagnostics of Electronic Circuits & Systems, DDECS 2011, Cottbus, Germany, April 13-15, 2011},
  editor = {Rolf Kraemer and Adam Pawlak and Andreas Steininger and Mario Schölzel and Jaan Raik and Heinrich Theodor Vierhaus},
  publisher = {IEEE},
  isbn = {978-1-4244-9755-3},
}