RF Performance of GaN-Based Graded-Channel HEMTs

Nivedhita Venkatesan, Jeong Moon, Joel Wong, Bob Grabar, Michael Antcliffe, Peter Chen, Erdum Arkun, Isaac Khalaf, David Fanning, Patrick Fay. RF Performance of GaN-Based Graded-Channel HEMTs. In IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020, Monterey, CA, USA, November 16-19, 2020. pages 1-4, IEEE, 2020. [doi]

@inproceedings{VenkatesanMWGAC20,
  title = {RF Performance of GaN-Based Graded-Channel HEMTs},
  author = {Nivedhita Venkatesan and Jeong Moon and Joel Wong and Bob Grabar and Michael Antcliffe and Peter Chen and Erdum Arkun and Isaac Khalaf and David Fanning and Patrick Fay},
  year = {2020},
  doi = {10.1109/BCICTS48439.2020.9392987},
  url = {https://doi.org/10.1109/BCICTS48439.2020.9392987},
  researchr = {https://researchr.org/publication/VenkatesanMWGAC20},
  cites = {0},
  citedby = {0},
  pages = {1-4},
  booktitle = {IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2020, Monterey, CA, USA, November 16-19, 2020},
  publisher = {IEEE},
  isbn = {978-1-7281-9749-4},
}