Molybdenum and low-temperature annealing of a silicon power P-i-N diode

J. Vobecký, V. Komarnitskyy, V. Záhlava. Molybdenum and low-temperature annealing of a silicon power P-i-N diode. Microelectronics Reliability, 51(3):566-571, 2011. [doi]

Abstract

Abstract is missing.