Drift induced rigid current shift in Ge-Rich GST Phase Change Memories in Low Resistance State - researchr publication authors

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Flavio Giovanni Volpe, Alessandro Cabrini, Marco Pasotti, Guido Torelli. Drift induced rigid current shift in Ge-Rich GST Phase Change Memories in Low Resistance State. In 26th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2019, Genoa, Italy, November 27-29, 2019. pages 418-421, IEEE, 2019. [doi]

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