Akio Wakejima, Arijit Bose, Debaleen Biswas, Shigeomi Hishiki, Sumito Ouchi, Koichi Kitahara, Keisuke Kawamura. AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications. IEICE Trans. Electron., 105-C(10):457-465, October 2022. [doi]
@article{WakejimaBBHOKK22,
title = {AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications},
author = {Akio Wakejima and Arijit Bose and Debaleen Biswas and Shigeomi Hishiki and Sumito Ouchi and Koichi Kitahara and Keisuke Kawamura},
year = {2022},
month = {October},
doi = {10.1587/transele.2022mmi0009},
url = {https://doi.org/10.1587/transele.2022mmi0009},
researchr = {https://researchr.org/publication/WakejimaBBHOKK22},
cites = {0},
citedby = {0},
journal = {IEICE Trans. Electron.},
volume = {105-C},
number = {10},
pages = {457-465},
}