AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications

Akio Wakejima, Arijit Bose, Debaleen Biswas, Shigeomi Hishiki, Sumito Ouchi, Koichi Kitahara, Keisuke Kawamura. AlGaN/GaN HEMT on 3C-SiC/Low-Resistivity Si Substrate for Microwave Applications. IEICE Trans. Electron., 105-C(10):457-465, October 2022. [doi]

Abstract

Abstract is missing.