A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etching - researchr publication authors

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Patrick Waltereit, Marina Preschle, Stefan Muller, Lutz Kirste, Heiko Czap, Joachim Ruster, Michael Dammann, Richard Reiner. A homogeneous and reproducible large-area, low dispersion GaN-on-Si normally-off 600 V transistor technology using selective GaN etching. In 76th Device Research Conference, DRC 2018, Santa Barbara, CA, USA, June 24-27, 2018. pages 1-2, IEEE, 2018. [doi]

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