H. W. Wan, Y. J. Hong, Y. T. Cheng, M. Hong. BTI Characterization of MBE Si-Capped Ge Gate Stack and Defect Reduction via Forming Gas Annealing. In IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019. pages 1-4, IEEE, 2019. [doi]
@inproceedings{WanHCH19,
title = {BTI Characterization of MBE Si-Capped Ge Gate Stack and Defect Reduction via Forming Gas Annealing},
author = {H. W. Wan and Y. J. Hong and Y. T. Cheng and M. Hong},
year = {2019},
doi = {10.1109/IRPS.2019.8720567},
url = {https://doi.org/10.1109/IRPS.2019.8720567},
researchr = {https://researchr.org/publication/WanHCH19},
cites = {0},
citedby = {0},
pages = {1-4},
booktitle = {IEEE International Reliability Physics Symposium, IRPS 2019, Monterey, CA, USA, March 31 - April 4, 2019},
publisher = {IEEE},
isbn = {978-1-5386-9504-3},
}