Jinbo Wan, Hans G. Kerkhoff. New drain current model for nano-meter MOS transistors on-chip threshold voltage test. In 20th IEEE European Test Symposium, ETS 2015, Cluj-Napoca, Romania, 25-29 May, 2015. pages 1-6, IEEE, 2015. [doi]
@inproceedings{WanK15,
title = {New drain current model for nano-meter MOS transistors on-chip threshold voltage test},
author = {Jinbo Wan and Hans G. Kerkhoff},
year = {2015},
doi = {10.1109/ETS.2015.7138751},
url = {http://dx.doi.org/10.1109/ETS.2015.7138751},
researchr = {https://researchr.org/publication/WanK15},
cites = {0},
citedby = {0},
pages = {1-6},
booktitle = {20th IEEE European Test Symposium, ETS 2015, Cluj-Napoca, Romania, 25-29 May, 2015},
publisher = {IEEE},
isbn = {978-1-4799-7603-4},
}