Statistical variability in 14-nm node SOI FinFETs and its impact on corresponding 6T-SRAM cell design

Xingsheng Wang, Binjie Cheng, Andrew R. Brown, Campbell Millar, Asen Asenov. Statistical variability in 14-nm node SOI FinFETs and its impact on corresponding 6T-SRAM cell design. In Proceedings of the 2012 European Solid-State Device Research Conference, ESSDERC 2012, Bordeaux, France, September 17-21, 2012. pages 113-116, IEEE, 2012. [doi]

Abstract

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