Contributions of SRAM, FF and combinational circuit to chip-level neutron-induced soft error rate: - Bulk vs. FD-SOI at 0.5 and 1.0V -

Liao Wang, Soichi Hirokawa, Ryo Harada, Masanori Hashimoto. Contributions of SRAM, FF and combinational circuit to chip-level neutron-induced soft error rate: - Bulk vs. FD-SOI at 0.5 and 1.0V -. In 15th IEEE International New Circuits and Systems Conference, NEWCAS 2017, Strasbourg, France, June 25-28, 2017. pages 33-36, IEEE, 2017. [doi]

Abstract

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