Corrigendum to "A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors" [Microelectron. Reliab. 60 (2016) 67-69] - researchr publication authors

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Weiliang Wang, Karim Khan, Xingye Zhang, Haiming Qin, Jun Jiang, Lijing Miao, Kemin Jiang, Pengjun Wang, Mingzhi Dai, Junhao Chu. Corrigendum to "A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors" [Microelectron. Reliab. 60 (2016) 67-69]. Microelectronics Reliability, 67:159, 2016. [doi]

This author has not been identified. Look up 'Weiliang Wang' in GoogleThis author has not been identified. Look up 'Karim Khan' in GoogleThis author has not been identified. Look up 'Xingye Zhang' in GoogleThis author has not been identified. Look up 'Haiming Qin' in GoogleThis author has not been identified. Look up 'Jun Jiang' in GoogleThis author has not been identified. Look up 'Lijing Miao' in GoogleThis author has not been identified. Look up 'Kemin Jiang' in GoogleThis author has not been identified. Look up 'Pengjun Wang' in GoogleThis author has not been identified. Look up 'Mingzhi Dai' in GoogleThis author has not been identified. Look up 'Junhao Chu' in Google

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