TCAD-Based Investigation of the Electrical Characteristics of Normally off p-GaN Passivated GaN HEMTs

Yubo Wang, Fan Li, Xuan Chi, Wen Liu, Guohao Yu, Zhongkai Du, Baoshun Zhang. TCAD-Based Investigation of the Electrical Characteristics of Normally off p-GaN Passivated GaN HEMTs. In International Conference on IC Design and Technology, ICICDT 2022, Hanoi, Vietnam, September 21-23, 2022. pages 57-60, IEEE, 2022. [doi]

Abstract

Abstract is missing.