Modeling of the Gate Bias-Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs

Mingyan Wang, Yuanjie Lv, Heng Zhou, Peng Cui, Zhaojun Lin. Modeling of the Gate Bias-Dependent Velocity-Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETs. IEEE Access, 12:16989-16998, 2024. [doi]

Abstract

Abstract is missing.