Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories

Zhe Wang, Yan Liu, Jiuren Zhou, Genquan Han. Double-gated ferroelectric-gate field-effect-transistor for multi-bit content-addressable memories. Microelectronics Journal, 143:106030, January 2024. [doi]

Authors

Zhe Wang

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Yan Liu

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Jiuren Zhou

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Genquan Han

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