3 as Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs

Qiang Wang, Maolin Pan, Penghao Zhang, Luyu Wang, Yannan Yang, Xinling Xie, Hai Huang, Xin Hu, Min Xu. 3 as Gate Dielectric for High Performance AlGaN/GaN MIS-HEMTs. IEEE Access, 12:16089-16094, 2024. [doi]

Abstract

Abstract is missing.