Luhao Wang, Alireza Shafaei, Massoud Pedram. Gate-all-around FET based 6T SRAM design using a device-circuit co-optimization framework. In IEEE 60th International Midwest Symposium on Circuits and Systems, MWSCAS 2017, Boston, MA, USA, August 6-9, 2017. pages 1113-1116, IEEE, 2017. [doi]
Abstract is missing.